7440-44-0 Direct production of ultra-fine nitrides (Si3N4 and AIN) and carbides (SiC, WC and TiC) powders by the arc plasma method
A direct method of producing ultra-fine nitride and carbide powders of 20 to 40 nm by arc plasma in a controlled atmosphere (with ammonia or methane gas) is described. The powders produced were SiC, TiC, WC (+ W2C), AIN and Si3N4. Other nitrides and carbides may also be produced using this method. Special attention was paid to the production conditions of silicon nitride.
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